Atotech today announced its participation at this year’s SEMICON Taiwan Show, held from September 5 to 7, 2018, in the Taipei Nangang Exhibition Center Hall 1 in Taipei, Taiwan. The Atotech team can be found at booth J2340 and at the SiP Global Summit where Dr. Ralf Schmidt, R&D Manager Semiconductor at Atotech Group, will exemplify the company’s answer for enhanced reliability of sub 5 µm L/S RDL for 5G.
“Next generation devices for FOWLP require the reduction of the RDL pitch to 1×1 µm or less. This leads to an increased importance of the mechanical properties. Recent findings point out the importance of the formation of a proper composite with the subjacent substrate, i.e. polyimide (PI). The composite formation can strongly improve the mechanical properties and, thus, the reliability of the Cu lines,” states Ralf.
In his presentation on Thursday, September 6, 2018, from 3:45 pm to 4:15 pm, Ralf will discuss the different solutions to promote the formation of a proper composite material consisting of Cu RDL lines and PI, especially with respect to their influence on mechanical properties as well as their suitability for potential 5G applications. The combination of high purity Cu deposits and strong composite formations with the substrate is considered to be a key parameter for future sub 5 µm L/S multilayer RDL technologies.
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